2011 CAISS Seminar: STT-MRAM And Magnetic Sensors12/03/2011 - 12/03/2011

2011 CAISS Seminar:  STT-MRAM and Magnetic Sensors

Magnetism based innovations have provided tremendous opportunities for technology and business development in recent decades.  In a world of constant technological innovation, what opportunities and challenges lie ahead for MRAM and Sensor industries?   Throughout this seminar, invited industry experts will share their views and insights with audiences about technology advancements and future market opportunities in MRAM and Sensor industries.  Attendees will also have the opportunity to interact with featured speakers and fellow industry members, facilitating conversations that can promote valuable exchanges of ideas and cooperation.

To register for this free CAISS seminar, please follow link: http://caissmagsensor.eventbrite.com

To get more updated information on CAISS seminar, please visit http://www.caiss.org

Date:         December 3rd, 2011, Saturday

Time:        1:30PM-5:00PM

Venue:         Western Digital (recording media operation site)

Pacific Rim Conference Room

1710 Automation Pkwy, San Jose, CA 95131

Seminar Agenda:

1:30pm - 2:00pm  Sign-in and registration

2:00pm - 3:30pm  Spin Torque MRAM: Physics and Implementation Issues by Dr. Bob Beach, MagIC

3:30pm - 5:00pm  Magnetic Sensors and their Unique Applications by Dr. Hong Wan, mCube

Speakers’ Abstract and Biography:

Spin Torque MRAM: Physics and Implementation Issues by Dr. Bob Beach, MagIC

This talk will present the physics of Spin-Torque Transfer Magneto-Resistive RAM (STT-MRAM) in magnetic tunnel-junctions. It becomes difficult to scale down the bit cell for conventional field-based MRAM beyond the 90nm node, and the industry is keen to bring STT-MRAM into advanced products. A tutorial presentation of the physics behind tunneling magnetoresistance (TMR) and STT will be followed by a consideration of various STT design options for the MRAM bit. These include the recent discovery of perpendicular magnetic anisotropy in thin CoFeB films adjacent to MgO, and the design of the TMR stack and physical bit dimensions for optimal electrical and magnetic performance. Bits in the STT-MRAM array need to be engineered so they can be written and read repeatedly and reliably under multiple write cycles, down to the PPM level. Control of the distributions that determine these attributes is critical for STT-MRAM to be successful in the marketplace.

Bob Beach received his Ph.D. in Physics from the University of Illinois in 1992, where he studied the magnetic structure of rare-earth multilayers. He has spent the bulk of his career in the magnetic recording industry, mostly working on read head design, and was a member of the team at Hitachi that introduced the industy's first MgO-based TMR recording head. Since 2007, he has been at MagIC Technologies, a division of TDK, working to develop Spin-Torque MRAM.  

Magnetic Sensors and their Unique Applications by Dr. Hong Wan, mCube

Computers, communications and sensor technologies are converging to change the way we live, interact and conduct business. Sensors, as main interfaces between electric world and physical world, are starting to engage in our daily life and will be more so in the future. In this seminar, Dr. Hong Wan will present hardware/computer roadmaps, magnetic sensor technologies and their unique applications. Innovative magnetic sensor designs and challenges faced in the development and applications.

Dr. Hong Wan, Senior Director of Advanced Product Development of mCube Inc., is an innovative technology executive with extensive experiences in sensing and controls product developments. In her current role, she is leading advanced navigation product developments for mobile phone applications. Her responsibilities include business planning, product specifications, supplier management and R&D executions. With over a decade experiences in the industries covering Aerospace, Industry Control, Automotive and Consumer Electronics, Dr. Wan served as a technical manager in Eaton Innovation Center, Control and Solution Department, and various management roles in Honeywell in Semiconductor Sensors, personal navigation system and magnetic sensors departments. She has numerous technical publication and patents. Dr. Wan received her Ph.D and BS in Physics from Peking University, China.